bdw93, bdw93a, BDW93B, bdw93c npn silicon power darlingtons
1 september 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdw94, bdw94a, bdw94b and bdw94c 80 w at 25c case temperature 12 a continuous collector current minimum h fe of 750 at 3 v, 5 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. derate linearly to 150c case temperature at the rate of 0.64 w/c. 2. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) bdw93 bdw93a BDW93B bdw93c v cbo 45 60 80 100 v collector-emitter voltage (i b = 0) bdw93 bdw93a BDW93B bdw93c v ceo 45 60 80 100 v emitter-base voltage v ebo 5v continuous collector current i c 12 a continuous base current i b 0.3 a continuous device dissipation at (or below) 25c case temperature (see note 1) p tot 80 w continuous device dissipation at (or below) 25c free air temperature (see note 2) p tot 2w operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c operating free-air temperature range t a -65 to +150 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 this series is obsolete and not recommended for new designs. obsolete
bdw93, bdw93a, BDW93B, bdw93c npn silicon power darlingtons 2
september 1993 - revised september 2002 specifications are subject to change without notice. notes: 3. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 100 ma i b = 0 (see note 3) bdw93 bdw93a BDW93B bdw93c 45 60 80 100 v i ceo collector-emitter cut-off current v cb = 40 v v cb = 60 v v cb = 80 v v cb = 80 v i b =0 i b =0 i b =0 i b =0 bdw93 bdw93a BDW93B bdw93c 1 1 1 1 ma i cbo collector cut-off current v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v v cb = 45 v v cb = 60 v v cb = 80 v v cb = 100 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c bdw93 bdw93a BDW93B bdw93c bdw93 bdw93a BDW93B bdw93c 0.1 0.1 0.1 0.1 5 5 5 5 ma i ebo emitter cut-off current v eb = 5 v i c =0 2 ma h fe forward current transfer ratio v ce = 3 v v ce = 3 v v ce = 3 v i c = 3 a i c = 10 a i c = 5 a (see notes 3 and 4) 1000 100 750 20000 v ce(sat) collector-emitter saturation voltage i b = 20 ma i b = 100 ma i c = 5 a i c = 10 a (see notes 3 and 4) 2 3 v v be(sat) base-emitter saturation voltage i b = 20 ma i b = 100 ma i c = 5 a i c = 10 a (see notes 3 and 4) 2.5 4 v v ec parallel diode forward voltage i e = 5 a i e = 10 a i b = 0 i b = 0 2 4 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.56 c/w r ja junction to free air thermal resistance 62.5 c/w obsolete
bdw93, bdw93a, BDW93B, bdw93c npn silicon power darlingtons 3
september 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 20 10 10 h fe - typical dc current gain 50000 100 1000 10000 tcs130ae t c = -40c t c = 25c t c = 100c v ce = 3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 05 10 15 20 25 30 tcs130ag t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v be(sat) - base-emitter saturation voltage - v 05 10 15 20 25 30 tcs130ai t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2% obsolete
bdw93, bdw93a, BDW93B, bdw93c npn silicon power darlingtons 4
september 1993 - revised september 2002 specifications are subject to change without notice. thermal information figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 tis130aa obsolete
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